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dc.contributor.authorElharari, Najah Ibrahem
dc.contributor.authorMagrem, Amna Abo
dc.contributor.authorTrab, Sumaya Faraj
dc.date.accessioned2021-10-03T11:56:21Z
dc.date.available2021-10-03T11:56:21Z
dc.date.issued2021-09
dc.identifier.urihttp://dspace.zu.edu.ly/xmlui/handle/1/1488
dc.description.abstractThe researcher prepared CuInSe2 thin films by conventional evaporation method under vacuum . And he also prepared films at different film thickness and different annealing temperatures. X-ray diffraction indicates that the prepared bulk and films both were polycrystalline line with tetragonal phase. The study conducted at different annealing temperatures and different film thicknesses on the optical properties of CuInSe2 thin films. The Optical constants (the attenuation coefficient and the refractive index of the films and their dependence on the annealing temperature and film thickness show Direct and indirect transition. Markedly change occurred in the energy gap due to transition detected in the prepared films that was around 1eV.No with the variation of the films.en_US
dc.language.isoenen_US
dc.publisherجامعة الزاويةen_US
dc.titleEffect of Annealing Temperature and Film Thickness on the Optical properties of CuInSe2Thin Filmsen_US
dc.typeArticleen_US


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